TPD1045F 2006-10-31 1 toshiba intelligent power device silicon monolithic power mos integrated circuit TPD1045F low-side power switch for moto r, solenoid and lamp drive the TPD1045F is a low-side power switch. the ic has a vertical mosfet output which can be directly driven from a cmos or ttl logic circuit (e.g., an mpu). the ic is equipped with intelligent self-protection functions. features ? a monolithic power ic with a new structure combining a control block and a vertical power mosfet (l 2 - -mos ) on single chip. ? can directly drive a power load from a cmos or ttl logic. ? built-in protection circuits agai nst overvoltage (active clamp), over temperature (thermal s hutdown), and overcurrent (switching mode). ? low drain-source on-resistance: r ds (on) = 100 m (max) (@v in = 5 v, i d = 2 a, t ch = 25c) ? 8-pin sop package with embossed-tape packing. pin assignment (top view) marking note 1: due to its mos structure, this product is sensitive to static electricity. sop8-p-1.27a weight: 0.08 g (typ.) drain drain drain in 1 2 3 4 8 7 6 5 source source source drain (top view) tpd1045 f lot no. (weekly code) a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
TPD1045F 2006-10-31 2 block diagram pin description pin no. symbol pin description 1, 2, 3 source source (ground) pin 4 in input pin. this pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 5 ,6, 7, 8 drain drain pin. when the load is short circuited and current in exce ss of the detection current (10a min) flows to the drain (output) pin, the drain (output) automatically turns on or off. timing chart note 2: the overheating detector circ uits feature hysteresis. after overheating is detected, normal operation is restored only when the channel temperature falls by th e hysteresis amount (10c typ.) in relation to the overheating detect ion temperature. drain source in over temperature detection/protection over current detection/protection input signal v in overcurrent detection (load short circuit) over temperature detection drain to source voltage v ds drain current i d over current protection thermal shutdown (note 2) normal v cl(dss) v dd inductive load over temperature detection over temperature recover y hysteresis(10 typ.)
TPD1045F 2006-10-31 3 truth table v in v ds output state state l h off h l on normal l h off h h current limiting(switcing) overcurrent l h off h h on overtemperature absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds (dc) 50 v drain current i d (dc) internally limited a input voltage v in ?0.3~7 v power dissipation(note 3-a) p d(1) 1.1 w power dissipation(note 3-b) p d(2) 0.425 w single pulse active clamp tolerance (note 4) e as 158 mj active clamp current i ar 5 a repetitive active clamp tolerance (note 3-a) (note 5) e ar 0.11 mj operating temperature t opr ?40~125 c channel temperature t ch 150 c storage temperature t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit 113.5 (note 3-a) thermal resistance, channel to ambient r th(ch-a) 294.0 (note 3-b) c /w note 3: 3-a : glass epoxy board (a) 3-b : glass epoxy board (b) note 4 : v dd = 25 v ? t ch = 25 (initial) ? l = 7.4 mh ? i ar = 5 a ? r g = 25 note 5 : repetitive rating : pulse width limited by maximum channel temperature. fr-4 25.4 25.4 0.8 (unit mm) fr-4 25.4 25.4 0.8 (unit mm)
TPD1045F 2006-10-31 4 electrical characteristics characteristics symbol test circuit test condition min typ max unit t ch = 25c 50 58 - drain to source clamp voltage v (cl) dss - t ch = - 40~125c v in = 0 v, i d = 10 ma 50 - - v t ch = 25c 1.0 1.5 2.8 input threshold voltage v th - t ch = - 40~125c v ds = 12 v, i d = 10 ma 0.8 - 3.0 v protective circuit operation input voltage range v in (opr) - t ch = - 40~125c - 4 - 7 v t ch = 25c - - 10 drain cut-off current i dss - t ch = - 40~125c v in = 0 v, v ds = 12 v - - 30 a t ch = 25c - 300 750 i ih (1) - t ch = - 40~125c v in = 5 v, at normal operation - - 750 high level input current i ih (2) - t ch = - 40~125c v in = 5 v, when protective circuit is actuated - - 1200 a t ch = 25c - 70 100 drain to source on resistance r ds (on) - t ch = - 40~125c v in = 5 v, i d = 2 a - - 150 m load-short tolerance v ds - t ch = - 40~125c v in = 4 7 v 18 - - v temperature detection t ot(1) - 150 170 200 c over temperature detection temperature recovery t ot(2) - - v in = 5 v 125 160 - t ch = 25c 5 10 - over current detection i oc - t ch = - 40~125c v in = 5 v 5 - - a t ch = 25c - 25 100 t on t ch = - 40~125c - - 100 t ch = 25c - 30 100 switching time t off 1 t ch = - 40~125c v dd = 12 v, v in = 0 v/5 v, r l = 10 - - 100 s drain to source diode forward voltage v dsf - t ch = 25c v in = 0 v, i f = 5 a - - 1.8 v test circuit 1 switching time measuring circuit test circuit measured waveforms v v dd =12v r l =10 p. g. TPD1045F v ds v in drain in source 12 v 5 v t off t on 90% 90% 10% 10% v ds v in t r Q 0.1 s 90% 10% t f Q 0.1 s 0 v 0 v
TPD1045F 2006-10-31 5 i ih( 2) -t ch 0 100 200 300 400 500 600 700 800 900 1000 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) iih(2) (a) v in =5v state:over current i ih( 2) -v in 0 200 400 600 800 1000 1200 1400 1600 012345678 ?R v in (v) i ih (2)( a) t ch = 25c state:overcur rent i ih(1) -v in 0 100 200 300 400 500 600 700 800 900 1000 012345678 ?R v in (v) i ih (1)( a) t ch = 25c state:normal i ih(1) -t ch 0 100 200 300 400 500 600 700 800 900 1000 -80 -60 -40 - 20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) i ih(1) ( a) v in =5v state:normal v th -t ch 0 1 1 2 2 3 3 4 4 5 5 - 80 - 60 -40 -20 0 20 40 60 80 100 120 140 160 ?? t ch () ?R v th (v) v ds =12v i d =10ma v (cl)dss -t ch 0 10 20 30 40 50 60 70 80 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) ???`g?R v (cl)dss (v) v in =0v i d =10ma drain to source clamp voltage v (cl)dss (v) channel temperature t ch (c) input threshold voltage v th (v) channel temperature t ch (c) channel temperature t ch (c) high level input current i ih ( 1 ) ( p a) high level input current i ih ( 1 ) ( p a) input voltage v in (v) high level input current i ih ( 2 ) ( p a) channel temperature t ch (c) high level input current i ih ( 2 ) ( p a) input voltage v in (v) v (cl)dss ? t ch v th ? t ch i ih ( 1 ) ? t ch i ih(1) ? v in i ih(2) ? t ch i ih(2) ? v in
TPD1045F 2006-10-31 6 t on ,t of f -v in 0 10 20 30 40 50 60 70 80 90 100 012345678 ?R v in (v) ??? ton,toff (s) v dd =12v r l =10 t ch =25c t o t on t on ,t off tch 0 10 20 30 40 50 60 70 80 90 100 - 80 - 60 - 40 -20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) ??? ton,toff (s) v dd =12v v in =5v r l =10 t on t o i oc -v in 0 2 4 6 8 10 12 14 16 18 20 012345678 ?R v in (v) ^? i oc (a) t ch =25c i oc -t ch 0 2 4 6 8 10 12 14 16 18 20 -80 -60 -40 - 20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) ^? i oc (a) v in =5v r ds(on) -v in 0 10 20 30 40 50 60 70 80 90 100 012345678 ?R v in (v) ???`g? ds(on) (m ) i d =2a t ch =25c r ds(on) -tch 0 20 40 60 80 100 120 -80 -60 -40 - 20 0 20 40 60 80 100 120 140 160 ?? t ch ( ) ???`g? ds(on) (m) v in =5v i d =2a drain to source on resistance r ds(on) (m ? ) channel temperature t ch (c) drain to source on resistance r ds(on) (m ? ) input voltage v in (v) r ds(on) ? t ch r ds(on) ? v in i oc ? t ch over current detection i oc (a) channel temperature t ch (c) i oc ? v in over current detection i oc (a) input voltage v in (v) t on ,t of f ? t ch switching time t on ,t off ( p s) channel temperature t ch (c) t on ,t off ? v in switching time t on ,t off ( p s) input voltage v in (v)
TPD1045F 2006-10-31 7 rth(ch-a)-tw 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 ?? tw (s) ^?? rth(h-a) ( /w) ( 1)m ounted on g lass epoxy boar d(a) ( 2)m ounted on g lass epoxy boar d(b) m easuring sing le pulse,t a =25 (1) (2) tot-vin 0 20 40 60 80 100 120 140 160 180 200 220 240 0 12 3 45 67 8 ?R v in (v) ^?? tot () v dd =12v p d -ta 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 - 40 - 20 0 20 40 60 80 100 120 140 160 ?? t a ( ) S?p?p d (w) ( 1)m ounted on g lass epoxy boar d(a) ( 2)m ounted on g lass epoxy boar d(b) (1) (2) t ot(1) ? v in over temperature detection t ot(1) (c ) input voltage v in (v) p d ? ta ambient temperature ta (c) r th(ch-a) ? t w transient thermal resistance r th(ch-a) (c/w ) pulse width t w (s) power dissipation p d (w )
TPD1045F 2006-10-31 8 package dimensions weight: 0.08 g (typ.)
TPD1045F 2006-10-31 9 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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